| 摘要 |
PURPOSE:To etch a fine pattern with excellent reproducibility by etching Si, using an Au film for etching the plane of incidence formed onto a p layer as a mask, shaping a conductor film consisting of Au, etc., to a shape that the conductor film crosses over a stepped section formed near a boundary between the p layer and the plane of incidence and forming an Au film so as to coat the whole plate of incidence. CONSTITUTION:An Au film for etching a radiation incident plane is shaped into a P region in an element. The element previously has an i region 1, a p layer 2, a gate section (part of i region) 3, an n<+> section 4 and an n<+> electrode 5 under the state. The element is mounted to a jig 6 prior to the formation of the film, and a mask 7 coating the plane of incidence is set. An Au film is evaporated and formed onto the surface of the p layer 2 by using the mask. Acid-proof wax 9 is applied onto the p layer 2 and the surface of the n<+> electrode 5 as the pretreatment of etching. The plane of incidence is retreated to the inside through etching, and a stepped section 10 is shaped between the p layer 2 and the i region 1. Wax is removed, and an Au film is evaporated at the stepped section 10 generated through etching. An Au film 13 in the i region 1 is evaporated from the p layer 2 including the whole radiation incident-plane surface, thus forming a Schottky barrier between the Au film 13 and the i region 1.
|
