| 摘要 |
PURPOSE:To obtain an apparatus, by which the film growing rate is increased, on a wafer, by providing a heating part, which heats reacting gas that is blown through a dispersion head. CONSTITUTION:Reacting gas is blown on a wafer 3 through a dispersion head 1, and a film is formed on a wafer 3 in a normal pressure CVD apparatus. In this apparatus, a heating part 2, which heats the reacting gas blown from the dispersion head 1, is provided. For example, the dispersion head 1, which blows the reacting gas downward, is provided directly over a stage 8, on which the wafer 3 is mounted. A net 2 made of quartz, metal and the like, is provided between the head 1 and the stage 8. Then the net 2 is heated with a heater 9 at 250 deg.C or more and at a temperature less than the wafer temperature when the film is grown. In this way, since the reacting gas at a low temperature is heated and the temperature of the atmosphere in the vicinity of the wafer is kept at a high temperature, the high growing rate can be obtained.
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