| 摘要 |
PURPOSE:To form an electric-insulating dissimilar single crystal substrate for an silicon single crystal film having excellent electrical characteristics with superior productive efficiency by supplying a reaction system with disilane as a raw material together with a diluent gas. CONSTITUTION:A sapphire substrate 6 in 0.4mm thickness and two inch size is placed onto a graphite susceptor 7 coated with SiC in a high-frequency heating type vertical type silica reaction tube 8. The temperature of the sapphire substrate 6 is elevated from room temperature by a coil 5 for high-frequency heating while hydrogen 1 is flowed into the reaction tube 8 by a hydrogen purifier 2, and kept at the same temperature. Hydrogen 3 containing disilane and hydrogen 1 are flowed into the reaction tube 8 by an introducing tube 10 while the same temperature is kept and the flow rate is adjusted by mass flowmeters 4, thus vapor-growing an silicon single crystal. A turbo-molecular pump 11 and a rotary type vacuum pump 12 are connected to the lower section of the reaction tube 8, and a nonreacted gas and a diluent gas are discharged. The film thickness of an silicon single crystal film 9 deposited is 0.3mum, and a growth rate is approximately 0.10mum/min.
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