| 摘要 |
PURPOSE:To drive an N-I-N element effectively by converting ON-OFF of beams applied to a semiconductor device under the state, in which low voltage is applied, into electric signals and extracting the electric signals as output signals amplified under the state in which high voltage is applied. CONSTITUTION:When an N-I-N junction type semiconductor element, a photoelectric conversion amplification semiconductor device, is driven, low bias voltage Vb having the fast optical speed of response is applied to the element, and the presence of the irradiation of beams is converted into electrical ON-OFF signals by utilizing the optical speed of response at that time. High bias voltage Va, ¦Va¦>¦Vb¦ and VaXVb>=0 are applied to the element, the electrical signals generated by photoelectric conversion are amplified, and the amplified output signals are used as output signals without being flowed through another amplifier circuit, etc. Accordingly, the semiconductor device having photoelectric action and further light amplification action can be driven while characteristics thereof are utilized sufficiently.
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