| 摘要 |
PURPOSE:To simplify and stabilize manufacture by interposing a conductive etching stopping film under a base leading-out electrode and forming an external base region through heat treatment in the manufacture of a self-alignment transistor. CONSTITUTION:A base leading-out region consisting of a reverse conductivity type polycrystalline silicon film 27 is shaped onto an insulating film 28 including base-emitter regions in one conductivity type semiconductor substrate 21 surrounded by a field insulating film 25 through a conductive etching stopping film 26 (such as silicon carbide or boron nitride). The reverse conductivity type polycrystalline silicon film 27 and the conductive etching stopping film 26 on an emitter forming region 33 are removed through etching and a window is bored, and an external base region 30 is shaped through heat treatment. An insulating film 29 is formed onto the side face of the window, one conductivity type polycrystalline silicon film 32 is applied into the window, and the emitter region 33 is shaped through heat treatment. That is, the external base region 30 can be formed through the conductive etching stopping film through heat treatment. Accordingly, manufacture is simplified and stabilized, thus improving reproducibility.
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