| 摘要 |
PURPOSE:To electrically detect the total quantity of projected neutrons by projecting a neutron ray to a 1st semiconductor element and 2nd semiconductor element which are different in the quantity of the phosphorus to be incorporated and detecting the amt. of a change in the resistance value of the two semiconductor elements. CONSTITUTION:Silicon of atomic weight 30 changes to phosphorus of atomic weight 31 when the neutron ray is projected on a circuit. The quantity at which the silicon atom. of the atomic weight 30 changes to phosphorus is proportional to the total quantity of the neutron rays to be projected and since the resistance value generated by a resistor depends on the concn. of the phosphorus contained in the silicon, the resistor 14 contg. the silicon of the atomic weight 30 is changed in the resistance value by the projection of the neutron ray, but the resistance values of the other resistors 11, 12, 13 does not change. The change in the resistance value of the resistor 14 is, therefore, outputted from a differential amplifier 15. As a result, the total quantity of the neutron rays is electrically detected.
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