| 摘要 |
PURPOSE:To efficiently form a high quality thin film nearly free from dangling bonds by forming a region in which an ionized reactive gas is present near a substrate and allowing the reactive gas to react with cluster ions of a substance for vapor deposition to form a thin film on the substrate. CONSTITUTION:A vacuum vessel 6 is kept at a high degree of vacuum and a reactive gas in a cylinder 41 is fed to an internal vessel 94 through a flow rate regulating valve 42 and introduced into the vacuum vessel 6 from a jet nozzle 44. At this time, bias voltage is impressed on the reactive gas in the internal vessel 94 with a DC power source 102 to ionize and activate the reactive gas and a region in which the ionized reactive gas is present is formed near a substrate 7. A substance 15 for vapor deposition in a crucible 12 is then evaporated and the resulting vapor is jetted from a nozzle 11 to form clusters. Part of the clusters are ionized by electrons from an ionizing filament 21, accelerated by an accelerating electrode 3 and collided against the substrate 7 together with the unionized vapor. Thus, the substance 15 reacts with the reactive gas, forming a thin film free from dangling bonds on the substrate 7.
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