| 摘要 |
PURPOSE:To suppress the generation of an antiphase domain, by gradually raising a temperature on a group IV element substrate which is flattened by surface treatment so that epitaxial growth is performed by single atomic layer control. CONSTITUTION:Beams of a group III element (e.g., Ga) are radiated on a group iv element substrate (e.g., Si substrate), which is flattened in a state of an atomic layer level, under the coating of a group v element (e.g., As) so that one atomic layer is made to grow. Further, a temperature is raised by a reflection type high energy electron beam diffraction method until a streak pattern is recognized. While the temperature is raised gradually to 600 deg.C to 680 deg.C in succession, beams of the group III element are radiated intermittently to make the one-atom layers grow one by one. Hence, an anti-phase domain on the group iv element substrate can be suppressed.
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