发明名称 |
CONDUCTIVE VIA PLUG FOR CMOS DEVICES |
摘要 |
A material such as boron nitride is conformally deposited and then patterned to form adherent portions (22) on the sidewalls of high-aspect-ratio vias (18) formed in a dielectric layer (16) of a CMOS device. A conductive material such as tungsten is then selectively deposited in the vias on the boron nitride and on silicon or silicide at the via bottoms. In some cases, the deposition of tungsten is controlled to fill the vias thereby leaving an advantageous substantially planar surface for subsequent metallization. |
申请公布号 |
EP0257948(A3) |
申请公布日期 |
1988.09.28 |
申请号 |
EP19870307236 |
申请日期 |
1987.08.17 |
申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY |
发明人 |
LEVY, ROLAND ALBERT |
分类号 |
H01L21/8234;H01L21/3213;H01L21/336;H01L21/768;H01L23/485;H01L23/522;H01L27/088;H01L29/78;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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