| 摘要 |
PURPOSE:To improve the uniformity in a plane and the reproducibility of FET characteristics by forming a source or a drain ohmic electrode in a sawtooth shape. CONSTITUTION:An ohmic electrode 14 facing a gate electrode 6 is made a sawtooth shape and the directions of all sawteeth are arranged in the direction of <100>. Accordingly, the end of the ohmic electrode 14 is not affected by a piezoelectric charge due to the difference of the coefficients of thermal expansion of an insulating film such as SiO2 or Si3N4 for passivation or interlayer insulation and GaAs crystal since the piezoelectric charge is not generated in the direction perpendicular to an axis <100>. This improves the uniformity in a plane and the reproducibility of ohmic resistance and the uniformity in a plane and the reproducibility of FET characteristics are improved. |
