| 摘要 |
PURPOSE:To utilize the inductance effect by a bonding wire by removing a dielectric substrate beneath the bonding wire. CONSTITUTION:Bonding wires 6, 7 for series inductances L1, L2 are formed to Al2O3 substrates 1, 2 at the input and output side. Removed parts 8, 9 of the Al2O3 substrates 1, 2 are provided beneath the bonding wires 6, 7. A field effect transistor (TR) 3 is connected to microstrip lines 4, 5 by bonding wires to form the series inductances L2, L3 respectively. Moreover, the microstrip lines 4, 5 give capacitor C1-C4 with respect to ground.
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