| 摘要 |
PURPOSE:To improve the gettering efficiency of a silicon crystal substrate by intrinsically gettering a semiconductor device of the structure in which an epitaxial layer of film thickness replaced as a nondefect layer is formed on the substrate containing high carbon concentration. CONSTITUTION:After a crystal substrate 5 formed in thickness of approx. 5-50mum on which a silicon epitaxial layer 7 is formed by an epitaxial growing method on the surface of a high carbon concentration lifting silicon crystal 6 containing approx. 0.5-15ppma of carbon is first heat-treated to form a microdefect region in the crystal 6, and it is second heat-treated at higher temperature than that at the time of first heat treatment Since a heat treatment for forming the nondefect layer on the substrate surface is eliminated, total heat-treating time can be shortened to efficiently intrinsically getter it.
|
