MANUFACTURE OF SEMICONDUCTOR SUBSTRATE

摘要

PURPOSE:To prevent any dusting from occurring in later processes by a method wherein a distorted layer is formed on the rear of raw material mechanically or by laser beam irradiation to be removed within specified range (thickness) by a chemical process. CONSTITUTION:A distorted layer is formed on the rear of a raw material mechanically or by laser beam irradiation. Then, the rear distorted layer is removed in etching level within the range of 200-5000Angstrom . Thus, the least surface stained semiconductor substrate can be formed without lessening the gettering effect so that the substrate may be adapted for several types of devices by selecting pertinent combination of distortion level and etching level.