| 摘要 |
PURPOSE:To improve the film characteristics such as photoconductivity and photoconductivity ratio while decreasing the total spin density by a method wherein the pin density of optical band gap controlling element is made less than the spin density of silicon element. CONSTITUTION:When the substrate temperature (Ts) is raised from 200 deg.C to 240 deg.C, the spin density (Ns) is decreased down to 3.1X10<16>cm<-3> while when it is further raised up to 275 deg.C, the spin density (Ns) can be further decreased down to 1.1X10<16>cm<-3>. At the substrate temperature of 275 deg.C, the spin density (Nss) of Si element becomes more than the spin density (Neg) of Ge element. Besides, when the substrate temperature is raised from 275 deg.C to 300 deg.C, the spin density (Ns) is increased on the contrary. Furthermore, the film characteristics are most excellent when the substrate temperature is at 275 deg.C while the spin density (Neg) of Ge element is made less than the spin density (Nss) of Si element by controlling the surface reaction of substrate at alpha-SiGe:H film. Through these procedures, the film characteristics such as photoconductivity (sigmaph) and photoconductivity ratio (sigmaph/sigmad) can be improved markedly. |
