| 摘要 |
PURPOSE:To reduce cleaning time by providing a treatment chamber in which electrodes are provided, a gas supplier which supplies treatment gas into the treatment chamber, an evacuator which evacuates the treatment chamber to reduce the internal pressure to a required pressure and a cleaning electric source which has a specific frequency and is connected to the electrodes. CONSTITUTION:A power with a frequency less than 1 MHz is applied to electrodes by a cleaning power source. A switch 5 is connected to a high frequency source 4 side and a switch 6 is connected to a ground side. A wafer is placed on an electrode 2 and CHF3 is supplied to etch an SiO2 film formed on the wafer surface under a required pressure. In order to remove adhering deposits, a plasma cleaning is carried out. O2 gas is supplied into a treatment chamber 1 and the pressure in the chamber 1 is maintained at 0.1 Torr and the switches 5 and 6 are connected to a low frequency source 7 and a power with a frequency of 100 KHz is applied to the electrodes 2 and 3 to generate a plasma of O2 gas in the treatment chamber 1 for the plasma treatment.
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