| 发明名称 |
ETCHING METHOD OF GAAS COMPOUND SEMICONDUCTOR CRYSTAL |
| 摘要 |
PURPOSE:To etch the GaAs group crystal, by making faster the etching speed and smooth the etched surface without special equipment. |
| 申请公布号 |
JPS5436184(A) |
申请公布日期 |
1979.03.16 |
| 申请号 |
JP19770101697 |
申请日期 |
1977.08.26 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
UDAGAWA TAKASHI |
| 分类号 |
H01L29/80;H01L21/302;H01L21/308;H01L21/338;H01L29/76;H01L29/812;H01L33/16;H01L33/30 |
主分类号 |
H01L29/80 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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