| 摘要 |
PURPOSE:To produce a transistor with a small OFF current by a method wherein a II-VI compound semiconductor is formed into a polycrystalline thin film containing one or more elements selected out of Cu, Ag, and Au as impurities. CONSTITUTION:As the source of evaporation for a semiconductor substrate 4, one out of CdS, CdSe, and CdTe, or one of their solid solutions, doped with a tiny quantity of a Cu compound, is used. Evaporation is accomplished at two temperatures, using the difference between CdSe, etc., and Cu in terms of vapor pressure. In the resultant film, Cu concentration is high on CdSe, etc., and low along the interface between CdSe, etc., and a gate insulating film 3. Cu, Ag, or Au, included as impurity, develops into acceptors in the II-VI compound semiconductor. As donor-yielded thermally excited electrons moving through crystals disappear upon encounter with acceptors, the OFF current grows less. |
