| 摘要 |
PURPOSE:To promote speeding up of a semiconductor device, by providing a region like a stripe that is in parallel with a hetero junction interface of a semiconductor layer and includes interface and by causing its region where carriers quantized in proportion to one dimension are generated to be used a channel and then by performing a switching operation after selecting a conductive path of the carriers at an electrode mounted in the vicinity of a junction. CONSTITUTION:A region 5 like a stripe that is in parallel with a hetero junction interface of a semiconductor layer including its interface is prepared and carriers quantized in the vertical direction to its interface at least are generated in the region 5 and a conduction path of the carriers is selected by controlling the distribution in the parallel direction to the interface of the carriers through electrodes 8A and 8B mounted in the vicinity of a junction of the region 5. For example, a non-doped i-type GaAs layer 2 and an n-type AlxGa1-xAs electron supply layer 3 perform epitaxial growth on a semi-insulation GaAs substrate 1. Its semiconductor substrate is mesa-etched and the channel region 5 like a stripe having a width about 0.1mum and the branched channel regions 5A and 5B having each its branched width of about 0.1mum are treated by patterning and then control electrodes 8A and 8B and the like are mounted. |
