| 摘要 |
PURPOSE:To obtain a high-resolution pattern by a method wherein, after a fluorescent material has been installed between an electron beam radiating part and a photographic plate, a resist is exposed to light after an electron beam has been transformed into the light energy and the local heating of a substrate or the accumulation of an electric charge is suppressed. CONSTITUTION:An electron beam radiating part 11 forms an electron beam 14, which is accelerated by a voltage of 20 keV by using a conventional electron beam lithography aligner, in accordance with a pattern to be formed by an optoelectronic system; it controls the optoelectronic system in such a way that it exposes the pattern one after another. The controlled electron beam 14 irradiates a fluorescent material 13 where a quartz glass plate is coated with a fluorescent substance. The electron beam 14 is converted into the light 15 due to the action of the fluorescent substance; it passes through the fluorescent material 13; the light 15 corresponding to the shape of the electron beam is emitted rom the opposite face. The converted light 15 which corresponds to the shape of the electron beam 14 exposes a photoresist 12c in accordance with the shape of the pattern without causing the scattering.
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