发明名称 EQUIPMENT FOR VAPOR PHASE EPITAXY
摘要 PURPOSE:To obtain an epitaxial crystal layer with a uniform thickness and composition, by detecting the pressure insides a reaction pipe and a pressure vessel, operating a pressure adjusting means based on the detected information, and making the pressure in the inside of the reaction pipe equal to the pressure inside the pressure vessel. CONSTITUTION:The pressure inside a pressure vessel 15 is detected by a pressure sensor 19, and the detected signal Q2 is input to a pressure adjusting equipment 20. The difference between a detected signal Q1 detected by a pressure sensor 18 and the signal Q2 is compared by the equipment 20. When the signal Q1 is larger than the signal Q2, an exhausting equipment 21 connected to a reaction pipe 14 or a pressurizing equipment 24 connected to a pressure vessel 15 is operated so as to make the difference between the signal Q1 and the signal Q2 zero. When the signal Q1 is smaller than the signal Q2, a pressurizing equipment 23 connected to the reaction pipe 14 or an exhausting equipment 22 connected to the pressure vessel 15 is operated so as to make the difference between the signal Q1 and the signal Q2 zero. Thereby, an epitaxial crystal layer with a uniform thickness and composition can be obtained.
申请公布号 JPS63215043(A) 申请公布日期 1988.09.07
申请号 JP19870049785 申请日期 1987.03.03
申请人 FUJITSU LTD 发明人 MARUYAMA KENJI
分类号 H01L21/205;H01L21/365 主分类号 H01L21/205
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