| 摘要 |
PURPOSE:To obtain an N-type crystal having a small electric resistance and emitting blue light at room temperature, by a method wherein when donar impurity is doped in a ZnSxSe1-x crystal, magnesium is doped at the same time. CONSTITUTION:A ZnSe 2 in which Cl and Mg are doped is grown on an N-type GaAs substrate 1. Thereon an SiO2 film 3 is formed, on which metal electrodes 4 and 5 are formed. As the ion radius of Mg is smaller than that of Zn, and Mg is liable to bond with Se, Zn vacancy is considered to be replaced by Mg, and the electrical state is neutral. Further an intrinsic luminescence band does not exist in a long wavelength region. Therefore, by doping Mg simultaneously with donar impurity, Mg itself has no effect on electrical and optical characteristics of crystal, and restrains emission in a long wavelength region. Thereby, a blue light emission of high efficiency can be obtained. |
