| 摘要 |
<p>In a semiconductor laser device for emitting a laser beam of a variable frequency depending on a current applied to the laser device, there are provided a semiconductor substrate (1), an optical waveguide structure (4) formed on the substrate having two or more semiconductor light emission layers (10, 12) and barrier layers (91, 92) having a wider band gap than that of the light emission layers, alternately stacked, clad layers (3, 5) stacked on the opposite sides of the waveguide structure and having a lower refractive index than that of the waveguide structure, and a device (7, 8) for applying a current to the light emission layers, and the wave guide structure includes at least first and the second light emission layers which respectively emit lights having different wavelengths.</p> |
