| 摘要 |
PURPOSE:To reduce an electric field in the transverse direction near a channel stopper part and to prevent positive ions from being concentrated inside an oxide film in the vicinity of said part by a method wherein, at a planar-type high breakdown-voltage thyristor, the face of the channel stopper part is made higher than the face of a semiconductor interface. CONSTITUTION:At a planar-type high breakdown-voltage thyristor, an emitter layer 2 (P type) is formed on the whole surface from one face of a semiconductor substrate 1 (N type); a base layer 3 (P type) is formed selectively on its opposite face; a diffusion layer 4 which pierces the semiconductor substrate, of the same conductivity type as that of these, in the depth direction is formed at an outer periphery part. A channel stopper layer 5 (N<+>) is formed between the base layer 3 and the outer periphery part 4. This channel stopper layer 5 is formed on the semiconductor substrate 1 by a vapor growth method in order to reduce an electric field in the transverse direction near the channel stopper layer and in order to prevent positive ions from being concentrated inside an oxide film near the layer. |
