| 摘要 |
PURPOSE:To facilitate formation of a miniaturized transistor by a method wherein an emitter electrode serving as an emitter lead-out electrode is formed by self alignment, and an base electrode serving as a base lead-out electrode is formed neighboring to an emitter base junction by self alignment. CONSTITUTION:By vapor deposition and lift-off of emitter electrode metal, an emitter electrode metal layer 8 is formed, which covers the whole surface of the upper part of a stripe type protrusion 19, and protrudes in the form of an umbrella around the periphery of the strip type protrusion 19. From a part shielded by a resist of the stripe type protrusion 19, a base electrode metal is obliquely deposited by applying a mask, and a base electrode metal layer 9 is formed by lift-off. The emitter electrode 8 serving as an emitter lead-out electrode is formed by self alignment, and the base electrode 9 serving as a base lead-out electrode is formed neighboring to a base emitter junction part by self alignment. Thereby, the transistor is formed easily even if its size is very small.
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