| 摘要 |
PURPOSE:To prevent the generation of a positive fixed charge on the interface of a vapor-phase grown oxide film and a plasma nitride film by a method wherein a vapor-phase grown oxide film is grown on an aluminum wiring, and after a conductive substance has been formed on the whole surface by performing a vacuum deposition method, a plasma nitride film is formed. CONSTITUTION:A vapor-phase grown oxide film 8 is formed on an aluminum wiring 7 under the normal pressure or a decompressed condition using monosilane gas or oxygen. Then, and aluminum 9 is vapor-deposited on the oxide film 8 which is grown in vapor-phase by performing a vacuum deposition method. Then, the aluminum 9 is vapor-deposited on the oxide film 8 which was grown in vapor phase by performing a vacuum deposition method. Subsequently, a plasma nitride film 10 is grown by having monosilane gas and ammonia gas reacted by performing a plasma discharge, and the plasma nitride film 10 on a bonding pad section 11 is removed by performing an etching utilizing a photolithographic method. Then, the aluminum 9 is removed, the vapor-phase grown oxide film 8 is removed, and a pad part aluminum 7 which is a part of the aluminum wiring is exposed. |
