| 摘要 |
PURPOSE:To obtain an Si resist material having high sensitivity to KrF excimer laser light and high resolution by introducing oxygen atom into polysilane skeleton. CONSTITUTION:This pattern forming material consists of the compd. contg. the repeating unit expressed by the formula I. In the formula I, R1-R4 are substituents, of which at least one is a benzene ring or a sensitive group contg. benzene ring. The wavelength of the polysilane is moved to nearly 250nm and Si-Si bonds are easily cut by the KrF excimer laser when the oxygen atom is coordinated as shown by the formula I, by which the sensitivity is increased by about 100 times as compared to the conventional Si-contg. resist. Formation of the Si-contg. resist pattern as the upper layer of the two-layered resist at the time of exposing and developing by DUV light and excimer laser light in particular is thereby permitted with the high sensitivity and high resolution. |
