| 摘要 |
PURPOSE:To produce Ga molecular beam containing no oxygen by reducing a material by a method wherein a crucible containing molecular beam material is heated by a heater to jet out H2 downward upon the surface of material. CONSTITUTION:Material Ga 1 contained in a crucible 2 is heated by a heater 3. H2 is led from a duct 4 above the crucible 2 to the liquid level of Ga. The molecular beam evaporating from the liquid level is reduced by H2 to become a molecular beam having no Ga oxide, sharply decreasing the crystalline defect due to Ga oxide to crystallize around 80-100 crystals/cm<2>. Through these procedures, the manufacturing yield of elements can be increased markedly.
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