| 摘要 |
PURPOSE:To enable removing gallium adhered to the stage of a manipulator without destroying the vacuum of a growing chamber by mounting an aluminum piece which is larger than the quantity of the gallium adhered on the stage, e.g., one which is the same shape to a wafer. CONSTITUTION:If gallium adheres to stages 4, 4', not only a wafer 2 is made dirty but also it is feared that the wafer 2 cannot be transferred due to the surface tension of the melted gallium. For this reason, the gallium is removed by using an aluminum piece. For example, an aluminum plate 5 has the same shape to the wafer and is mounted on the stages 4, 4' of a manipulator without destroying the vacuum of a growing chamber by using the transfer system of a molecular beam epitaxial equipment. If the stages 4, 4' are kept above the melting point of the gallium, the gallium adhered on the stages 4, 4' is absorbed in the aluminum plate 5 within approx. several hours. The aluminum plate 5 which finished absorbing the gallium is brought out of the growing chamber again without destroying the vacuum of the growing chamber by using the transfer system.
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