| 摘要 |
PURPOSE:To obtain a MOS transistor operated by an electric field in the horizontal direction of a substrate surface by boring mutually opposite recessed sections to a substrate extending over both source-drain regions, forming a gate electrode to one recessed section through an insulating film and forming a back gate to the other recessed section. CONSTITUTION:An N type source region 11 and an N type drain region 12 are diffused and formed to a P type Si substrate 10 at an interval, electrodes 20 and 21 are fitted to each region, and two orthogonal recessed sections 13 and 14 extending over these regions are bored between these regions. A gate electrode 16 in Al, etc. is formed in one recessed section 13 through an SiO2 film 15, the inside of the other recessed section 14 is coated with a P<+> type layer 17, both recessed sections are coated with the SiO2 film 15, and an Al back gate 18 is connected to the layer 17 through a through-hole 19. According to such constitution, when an electric field is applied between the electrodes 16 and 18 under the state in which the electrode 20 is grounded and fixed voltage is applied to the electrode 21, an electric field is generated toward the recessed section 14 from the recessed section 13, and an N type inversion channel reaching the region 12 from the region 11 is generated and currents 22 flow. |
