发明名称 FORMATION OF THIN FILM
摘要 PURPOSE:To form a high quality thin film having high crystallinity by vaporizing a solid starting material by heating, mixing the resulting vapor with a carrier gas, jetting the gaseous mixture into vacuum to produce high- speed neutral cluster beams and projecting the beams. CONSTITUTION:A solid starting material 12 is put in a supersonic nozzle 11 and heated with a heater 13 for heating the nozzle. The starting material 12 vaporizes and the resulting vapor is mixed with a carrier gas 16. This gaseous mixture is jetted into vacuum from the small hole of the nozzle 11 by free expansion. At this time, the mixture is cooled because the internal energy is reduced by adiabatic expansion, so the vapor of the starting material 12 condenses and produces high-speed neutral cluster beams. The beams are irradiated on a substrate 14 to form a thin film. Since ionization is not carried out, and surface damage due to ionic bombardment can be prevented.
申请公布号 JPS63176464(A) 申请公布日期 1988.07.20
申请号 JP19870007590 申请日期 1987.01.16
申请人 NEC CORP 发明人 NISHIYAMA IWAO
分类号 C23C14/32 主分类号 C23C14/32
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