| 摘要 |
PURPOSE:To prevent the rapid diffusion of a conductive film provided on the surface into an Si gate film and thus stabilize the threshold voltage of a transistor by a method wherein grain boundaries are eliminated by single-crystallizing a non-single crystal Si film, before forming a conductive film for low resistance on the surface of a gate electrode composed of the non single crystal Si film. CONSTITUTION:A thick field oxide film 102 is formed in the outer periphery of a P type Si substrate 101, and a thin gate oxide film 103 is adhered on the surface of the substrate 101 surrounded by the former film. At the center of this surface, a gate electrode 104' made of polycrystalline Si doped with phosphorus is formed. Next, as ions are implanted with the electrode as a mask, thus providing N type source and drain regions 105 in the substrate 101 on both sides of said electrode, and then the electrode 104' is converted into a single crystal 104'' by using an Ar-CW laser. Thereafter, the entire surface is covered with an SiO2 film 106, only the film 106 is left as 106' only in the side surface of the electrode 104' by etching, and a Pt silicide 108 is formed on the electrode 104' and the film 105. |
