| 摘要 |
PURPOSE:To prevent disconnections and separation of a wiring part and to improve the yield rare of semiconductor integrated circuits, by covering the wiring part of an aluminum film formed on a semiconductor crystal substrate with a screening material, and changing the part which is not covered with the screening material, into aluminum nitride. CONSTITUTION:An Al film 2 is formed on a semiconductor crystal substrate 1. A screening material film 3 made of silicon nitride or silicon oxide is formed. Photoresist is uniformly applied on the film 3. A wiring pattern comprising a specified resist film 4 is formed based on a circuit pattern by a photolithography method. The film 3 at the part which is not covered with the film 4 is polished and removed. Thus the wiring pattern consisting of the film 3 is formed. The resist film 4 is removed. Nitrogen ions are implanted into the entire surface of the substrate 1 by a plurality of times. The part of the Al film 2, which is not covered with the film 3, is changed into AlN. When the film 3 is removed by dry etching, the wiring in which the part of the film 2 that is changed into AlN is made to be an insulating film 2b and the surface is flat, and which has excellent adhesion with the substrate is obtained.
|
