| 摘要 |
PURPOSE:To remove the lowering of isolation voltage and disconnection, etc., and to improve reliability by bringing the surface of a high melting-point metallic silicide through a heat treatment process after deposition to an amorphous state through ion implantation and thermally treating the amorphous high melting-point metallic silicide in an oxidizing atmosphere. CONSTITUTION:When ions are implanted to the surface of a tungsten silicide film 4 as the upper layer of a gate electrode having polycide structure, the surface of the crystalline tungsten silicide film 4 is brought to an amorphous 12 state. When the temperature of an Si substrate 1 is elevated to 900 deg.C in an oxidizing atmosphere and the substrate 1 is oxidized, an oxide film 13 is formed, and the amorphous tungsten silicide film 12 is crystallized, and changed into a crystalline tungsten silicide film 12a. Accordingly, a crystallized tungsten silicide is turned into the amorphous state by previously disturbing crystals through ion implantation, and an oxidation process is executed, thus shaping the uniform excellent oxide film, into which tungsten, etc. are not mixed, then smoothing the interface of the oxide film and a gate electrode.
|
