| 摘要 |
<p>1. Process for purifying divided silicon by melting the said silicon under a hot plasma obtained by high-frequency excitation of plasma-forming gas, characterized in that, in a first stage, melting of th divided silicon is produced, the plasma-forming gas consisting of a mixture of 1 to 100 % hydrogen and of 99 % to 0 % of argon, and in that, in a second stage, the molten silicon originating from the first stage is treated with a plasma whose plasma-forming gas consists of a mixture of argon, hydrogen and oxygen, the proportion of oxygen in the mixture being between 0.005 % and 0.05 % and that of hydrogen between 1 and 99.995 %.</p> |
