| 摘要 |
PURPOSE:To obtain a quartz glass crucible, having a specific value or below of Al concentration on the inner surface, capable of reducing Al taken into an Si single crystal as well as a bad influence on element characteristics of semiconductor devices. CONSTITUTION:A quartz glass crucible having the above-mentioned characteristics is obtained by specifying the Al concentration on the inner surface at <=10ppm. This quartz glass crucible is produced by forming an SiO2 raw material into a crucible shape by a normal arc melting method and etching the inner surface with an aqueous solution of HF to >=30mum thickness. The above-mentioned treatment with the aqueous solution of HF is carried out using, e.g. 50% aqueous solution of HF for >=30min. Thereby Al taken into an Si single crystal can be reduced.
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