| 摘要 |
PURPOSE:To implement a method of manufacturing the title temperature sensor IC without effects of self-heating and external noises, by bonding a wafer, on which the temperature sensor IC is formed, to a dummy wafer, dividing the wafer of the temperature wafer IC into chips, dividing a substrate for each chip, and thereafter performing trimming. CONSTITUTION:Under the wafer state, the base of the transistor of each integrated circuit is connected to a substrate commonly in a temperature sensor integrated circuit. In this circuit, a wafer 1, on which the temperature sensor integrated circuit is formed, is bonded to a dummy wafer 3 with a fixing agent or by anode bonding. The wafer 1 of the temperature sensor integrated circuit is divided into chips. Said substrate is divided for every chip and trimmed. For example, the product wafer 1 after a wafer process 4 undergoes anode bonding to the rear surface of the dummy wafer 3 through a silicon dioxide film 2. Thereafter half dicing 6 is performed until grooves are formed in the dummy wafer 3. The product wafer 1 is divided into the chips. Under this State, the electric characteristics of each chip are measured and the trimming is performed 7. Thereafter, wafer breaking 8 is carried out, and the wafer is divided into the chips. |
