| 摘要 |
PURPOSE:To enhance chemical resistance of a thin film, by annealing a base body on which the thin film of various compds. is formed by a plasma CVD method in vacuum or under the existence of gaseous constitutional elements of the thin film at specified temp. CONSTITUTION:A base body 3 wherein the thin film of a compd. such as SiN, BN, SiO2 and AlN is formed on the surface by a plasma CVD method is fixed on a holder 2. Then the inside of a tubular reactor 4 made of quartz is exhausted via an exhaust pipe 9 of a chamber 1 made of metal adjacent thereto and regulated to about 10<-7>-10<-6>Torr degree of vacuum. In this state, the base body 3 is heated with a heater 5 such as an infrared ray lamp to anneal the thin film and hydrogen contained therein is removed. Besides in case the thin film is formed by SiN, BN and AlN, gaseous N2 is introduced into the tubular reactor 4 from a gas cylinder 6 to regulate the inside of the tubular reactor 4 to the atmopspheric pressure in a range within 760-10<-4>Torr. In case it is formed by SiO2, gaseous O2 is similarly introduced thereinto. Chemical resistance such as acid resistance and alkali resistance of the thin film is enhanced by annealing it to remove H2 contained therein.
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