| 摘要 |
PROBLEM TO BE SOLVED: To provide a phase shift mask good in quality by a simple method. SOLUTION: A translucent phase shifter film 2 is patterned on a mask substrate 1 to form a light-transmuting part 1a and a phase shifter part. A photoresist film 3 is formed on the uncovered mask substrate 1 and the phase shifter film 2, exposed to light through the back side of the mask substrate 1 and developed to remove the photoresist film 3 on the edge part of the phase shifter film 2 adjacent to the light-transmitting part and on the light-transmitting part. The remaining photoresist film 3 is carbonized by heat treatment. Namely, the obtd. phase shifter film 3 transmits weak light with a shifted phase only in the edge part but does not transmit light in the part other than the edged part. Therefore, in the edge part, the intensity of light on a wafer is made sharp by the interference effect of light same as by a conventional method, but in the center part, light is cut to prevent undesirable development. |
