发明名称 |
Liquid phase epitaxy apparatus and method |
摘要 |
An apparatus and method for performing liquid phase epitaxy, mercury containment, substrate leveling, in situ annealing/doping and gas flushing in a liquid phase epitaxy growth of HgCdTe. The apparatus is a self contained unit comprising a transparent cover for providing access to the interior of the apparatus and for forming a gas impermeable seal between the apparatus and the cover. The apparatus also contains a leveling apparatus, a gas flushing apparatus, and an apparatus for the in situ doping/quench annealing of HgCdTe epitaxial films. The leveling apparatus comprises channels and leveling balls that travel therein which align themselves between scribe marks when the apparatus is in a level position. The gas flushing apparatus is comprised of a gaseous purge ball valve that opens and seals a flushing channel that leads from the interior of the invention to the external environment. The in situ doping/quench annealing apparatus is accomplished via a stabilization chamber ball valve which operates independently with respect to the gaseous purge ball valve, thereby allowing in situ doping leveling without effecting the atmospheric integrity of the vessel.
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申请公布号 |
US4755364(A) |
申请公布日期 |
1988.07.05 |
申请号 |
US19860867974 |
申请日期 |
1986.05.29 |
申请人 |
ROCKWELL INTERNATIONAL CORPORATION |
发明人 |
LA CHAPELLE, JR., THEODORE J.;WEISMULLER, THOMAS P. |
分类号 |
C30B19/04;C30B19/06;(IPC1-7):H01L21/208 |
主分类号 |
C30B19/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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