| 摘要 |
PURPOSE:To prevent the generation of dust and the adhesion of a foreign manner, to keep a semiconductor device clean and to smooth the stepped section of the whole surface of a metallic layer by injecting the solidified particulates of a substance, which is easily solidified and liquefied or solidified and vaporized and does not contaminate the semiconductor device, onto the surface of the metallic layer together with a carrier gas. CONSTITUTION:A carrier gas 5 containing solidified particulates 4 is ejected and injected toward a metallic layer 1 from a nozzle 6 while repeatedly parallel- displacing the metallic layer 1 with a stepped section 1a. When the solidified particulates are made to collide with the metallic layer such as an aluminum layer in general, the metallic layer can be deformed plastically. Accordingly, a large number of such solidified particulates 4 in grain size allowble in the surface of the metallic layer 1 finally are carried by the gas 5 at a flow rate capable of plastically deforming the metallic layer 1 by collisions, and injected and made to collide to the metallic layer 1, thus smoothing the metallic layer on the side wall of the stepped section 1a by the neighboring metallic layer 1.
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