| 摘要 |
PURPOSE:To improve switching characteristics by forming a lead phthalocyanine LB film on the surfaces of an insulating substrate and a lower metal electrode by a Langmuir-Blodgett's technique (LB technique), thereby performing a crystal growth of a lead phthalocyanine on the surface of the above LB film after vaporizing its phthalocyanine; besides, by subjecting lead phthalocyanine molecules in a lead phthalocyanine evaporation film to a uniaxial orientation. CONSTITUTION:A lower metal electrode 4 is formed on the surface of an insulating substrate 3 consisting of glass or silicon and a lead phthalocyanine LB film 7 is formed on the surfaces of the insulating substrate 3 and the lower metal electrode 4 with an LB technique. In other words, dilithium phthalocyanine is dissolved in acetone and the above liquid is diluted with mesitylene and chloroform to make a developing liquid and dissolution of lead nitrate in the above developing liquid phase allows its surface of the liquid to form a lead phthalocyanine single molecule film. Subsequently, this approach permits lead phthalocyanine to perform a crystal growth by vaporizing its lead phthalocyanine on the surface of the lead phthalocyanine LB film 7 under specific condictions and also to obtain a lead phthalocyanine vaporlization film 5 of a uniaxial orientation where a pile of a lead phthalocyanine molecule stands vertically on the surface of the LB film 7. Then an upper metal electrode 6 is formed on the surface of the above vaporization film 5. |
