发明名称 |
PLASMA ETCHING OF INTEGRATED CIRCUIT |
摘要 |
Apparatus for dry chemical etching caused by ion bombardment of a substrate placed in a vacuum chamber. The substrate is in contact with an electrode, connected to a high frequency bias voltage source having one terminal connected to a ground of the chamber. The etchants are produced in the form of plasma by an electrical discharge maintained in the chamber containing a gas or a suitable gaseous mixture. The plasma is produced by a microwave generator and the bias voltage by means of a high frequency source. The respective amplitudes and frequencies of the two sources enable the base of a groove on an electronic circuit to be etched without erosion of the groove. |
申请公布号 |
JPS63158839(A) |
申请公布日期 |
1988.07.01 |
申请号 |
JP19870283234 |
申请日期 |
1987.11.11 |
申请人 |
OFFICE NATL ETUD RECH AEROSPAT <ONERA> |
发明人 |
EMU JIYOZEFU TAIE |
分类号 |
H01L21/302;H01J37/32;H01L21/26;H01L21/3065;H05H1/24 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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