发明名称 PLASMA ETCHING OF INTEGRATED CIRCUIT
摘要 Apparatus for dry chemical etching caused by ion bombardment of a substrate placed in a vacuum chamber. The substrate is in contact with an electrode, connected to a high frequency bias voltage source having one terminal connected to a ground of the chamber. The etchants are produced in the form of plasma by an electrical discharge maintained in the chamber containing a gas or a suitable gaseous mixture. The plasma is produced by a microwave generator and the bias voltage by means of a high frequency source. The respective amplitudes and frequencies of the two sources enable the base of a groove on an electronic circuit to be etched without erosion of the groove.
申请公布号 JPS63158839(A) 申请公布日期 1988.07.01
申请号 JP19870283234 申请日期 1987.11.11
申请人 OFFICE NATL ETUD RECH AEROSPAT <ONERA> 发明人 EMU JIYOZEFU TAIE
分类号 H01L21/302;H01J37/32;H01L21/26;H01L21/3065;H05H1/24 主分类号 H01L21/302
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