| 摘要 |
PURPOSE:To assure specified forward current-voltage characteristics with high reproducibility not to be affected by various factors of manufacturing processes by a method wherein TiN and/or TiO is partly laid on the interface between Al and Si. CONSTITUTION:An interface layer 21a by a barrier metal 21 is formed between an epitaxial layer 3 and an Al layer 5. The barrier metal 21 contains a TixAly 7, a Tix Siy 8, a TixNy 22 and a TixOy 23 while the total content TixNy 22 and TixOy 23 shall not exceed 20% out of the whole content. In order to form the barrier metal 21, firstly Ti films are formed by sputtering process using Al gas containing specified amount of N2 and O2 gas to form Ti films containing TixNy 22 and TixOy 23 and then TixNy 7 and TixSiy 8 are produced by repeatedly heating the Al layer 5. Through these procedures, the TixNy 22 and TixOy 23 are stabilized to be so hardly reactive to Al, Si that the barrier height is hardly changeable to assure IF-VF characteristics of diode with high reproducibility. |
