| 摘要 |
PURPOSE:To accurately grow a single crystal having a desired number of atom layers, by using a compd. of an element constituting a compd. single crystal contg. alkyls and a chlorine group as the raw material contg. >=1 kind of the element, and alternately supplying the element and the other element constituting the compd. single crystal. CONSTITUTION:For example, when a GaAs single crystal is grown by using the device of the conventional MO-CVD method, a Ga compd. contg. alkyls and a chlorine group such as Ga(C2H5)2Cl is used as the raw Ga material, and the compd. and the raw AsH3 material are alternately supplied. In this case, the Ga(C2H5)2Cl is decomposed in the boundary layer of the heated susceptor upper layer to dissociate the C2H5 group, the Cl group having a strong bonding force is not dissociated at this time, and Ga-Cl is supplied to the surface of a substrate as diffused species. When the supply of Ga(C2H5)2Cl is stopped, the device is evacuated, and AsH3 is supplied, the AsH3 is thermally decomposed in the vicinity of a growth surface, hance an As atom is introduced into the vacancy between the Ga atoms arranged in a monoatomic state, and the Cl is discharged as HCl.
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