| 摘要 |
PURPOSE:To improve the surface condition of the title grown zinc selenide and to improve its electrical and optical characteristics, by growing ZnSe on a semiconductor substrate with use of the org. compds. of Zn and Se, and further growing ZnSe thereon with use of H2Se instead of the org. Se compd. CONSTITUTION:The org. Zn compd. (e.g., dimethylzinc) is allowed to react with the org. Se compd. (e.g., dimethylselenium) to grow ZnSe on the semiconductor substrate. The org. Zn compd. (e.g., dimethylzinc) is then allowed to tract with H2Se to grow a ZnSe crystal film having excellent electrical and optical characteristics on the flat surface.
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