发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To prevent the reduction in margin of sense operation and the generation of unbalanced capacitance of two bit lines of bit line pairs by crossing two bits lines of bit line pairs on its way. CONSTITUTION:Two bit lines Bi, the inverse of Bi of bit lines Bi, the inverse of Bi,... are crossed at the middle point. Thus, the line-capacitance of the bit lines B1, the inverse of B1,... and signal lines using other wiring material than the bit lines is entirely the same. Thus, if mis-alignment is caused to the position of the signal line, no unbalance is caused to the two bit line capacitance of the bit line pairs and the reduction in the margin of the sense operation is prevented.
申请公布号 JPS63153792(A) 申请公布日期 1988.06.27
申请号 JP19860302376 申请日期 1986.12.17
申请人 SHARP CORP 发明人 NAWAKI MASARU;TONO HIROSHI;TAGAMI TOMOYUKI
分类号 G11C11/401;G11C11/4097 主分类号 G11C11/401
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