| 摘要 |
PURPOSE:To cover an input protecting resistor with a screening film completely and to improve the electrostatic breakdown strength of the input protecting resistor, by extending a resistor layer forming the input protecting resistor, and forming a wiring by utilizing the extended part. CONSTITUTION:An input protecting resistor layer 23 is provided along a silicon substrate 21 in an insulating layer 22 on the silicon substrate 21. A conductor layer 24 is provided on the insulating layer 22. The conductor layer 24 has a pad part 241 and a film part 242. The pad part 241 and the film part 242 are formed as a unitary body. The boundary of said parts is connected to an input-side end part 231 of the resistor layer 23 through a contact hole 25 formed in the insulating layer 22. The protecting resistor layer 23 is extended, and a wiring resistor layer 261 is provided. An N-type diffused layer is contacted with the layer 261, and a wiring layer 26 is formed. In this constitution, the film part 23 forming a screening film and the wiring layer 26 forming a wiring are formed as the different layers. The protecting resistor layer 23 can be covered with the film part 242 completely. Thus the electrostatic breakdown strength over the entire protecting resistor layer 23 is improved. |
