发明名称 SEMICONDUCTOR LIGHT-EMITTING DEVICE
摘要 PURPOSE:To obtain a high optical output only from one end surface by reflecting beams, which are generated in an active layer and wave-guided to an end surface on the side reverse to one end surface, from which the optical output must be extracted, by a reflecting mirror mounted onto the end surface on the reverse side on the extension of the active layer. CONSTITUTION:A first reflecting mirror 7 is formed in such a manner that an end surface is etched obliquely and a mirror coat 9 is executed, and a second reflecting mirror 8 is shaped in such a manner that an inclined section is formed to the end surface section of a substrate 1 and an optical guide layer 2 having a refractive index higher than the substrate 1, transparent to an optical output and consisting of a semiconductor such as N-InGaAsP is deposited onto the substrate 1. Beams are generated in an active layer 4, and beams wave-guided to an end surface on the side reverse to the direction of an optical fiber 10 from which the optical output must be extracted are reflected by the first and second reflecting mirrors 7, 8, projected into the optical guide layer 2 and output as the optical output l2 from an end surface on the optical fiber 10 side. Accordingly, an outgoing optical output l1 from the active layer 4 and a reflecting optical output l2 from the reflecting mirrors 7, 8 are projected into the optical fiber 10 and the optical output is increased in the optical fiber 10.
申请公布号 JPS63144586(A) 申请公布日期 1988.06.16
申请号 JP19860292716 申请日期 1986.12.09
申请人 MITSUBISHI ELECTRIC CORP 发明人 TAKAHASHI SHOGO
分类号 H01L33/10;H01L33/30 主分类号 H01L33/10
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