PRODUCTION OF COMPOUND SEMICONDUCTOR SINGLE CRYSTAL AND APPARATUS THEREFOR

摘要

PURPOSE:To obtain a compound semiconductor in good yield so as to have a high single crystal conversion, by flowing a raw material melt from an outer crucible into an inner crucible, dipping a seed crystal therein and pulling up the seed crystal while rotating the outer crucible and seed crystal. CONSTITUTION:An inner crucible 12 is perforated with flow holes 14 and 15 at the bottom and side and fixed to an outer crucible 11 so as not to float by buoyance when B2O3 (solid encapsulating agent) or a raw material is melted. An InAs polycrystal and B2O3 are introduced from the bottom into the outer space (R) in the outer crucible 11. The crucibles are set on the lower shaft 3 and a seed crystal of <100> orientation is attached to the upper shaft 2. The furnace body 1 is closed to evacuate the interior and nitrogen gas is filled to pass a current through a heater 4 and heat the interior of the crucibles. Thereby the B2O3 is melted and the InAs polycrystal is subsequently melted. An extremely clean melt is obtained in the inner crucible 12 without any floating foreign material. A seed crystal is dipped in the inner melt 6 to carry out seeding. The seed crystal is then pulled up while being rotated to grow a single crystal.