| 摘要 |
PURPOSE:To obtain a large output signal with low cost without necessitating an external circuit, by connecting the output terminal of a photodiode to the gate of a transistor device, and outputting potential change due to the incident light of the photodiode from a transistor device as the change of a current. CONSTITUTION:The photodiode 6 is constituted by forming an N<+> diffused layer on a semiconductor substrate, and the photodiode has a prescribed coupling capacity. A MOS transistor(transistor device 8) is connected to the photodiode 8, and the output terminal of the photodiode 6 is connected to the gate of the MOS transistor 8. Consequently, it is constituted so that the potential of the photodiode 6 becomes always equal to that of the gate of the MOS transistor 8, and the potential change due to the incident light of the photodiode 6 is outputted as the change of a drain current from the MOS transistor 8. The current is read out by a switching MOS transistor 9.
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